A. Gällström: search on Z-Library

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1

First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC

Csо́rе́, Andras, Magnusson, Björn, Son, Nguyen Tien, Gällström, Andreas, Ohshima, Takeshi, Ivanov, Ivan, Gali, Ádám

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 206 KB

2019

2

Prominent defects in semi-insulating SiC substrates

N.T. Son, P. Carlsson, A. Gällström, B. Magnusson, E. Janzén

Journal:

Physica B: Condensed Matter

Year:

2007

Language:

english

File:

PDF, 325 KB

english, 2007

3

The silicon vacancy in SiC

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, N.T. Son

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 541 KB

english, 2009

4

Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study

Ivády, Viktor, Gällström, Andreas, Son, Nguyen, Janzén, Erik, Gali, Adam

Journal:

Physical Review Letters

Year:

2011

Language:

english

File:

PDF, 592 KB

english, 2011

5

Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

H. Pedersen, S. Leone, A. Henry, V. Darakchieva, P. Carlsson, A. Gällström, E. Janzén

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2008

Language:

english

File:

PDF, 195 KB

english, 2008

6

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Andreas Gällström, Björn Magnusson, Franziska C. Beyer, Adam Gali, N.T. Son, Stefano Leone, Ivan G. Ivanov, Carl G. Hemmingsson, Anne Henry, Erik Janzén

Journal:

Physica B: Condensed Matter

Year:

2012

Language:

english

File:

PDF, 1.89 MB

english, 2012

7

Deep levels in tungsten doped n-type 3C–SiC

Beyer, F. C., Hemmingsson, C. G., Gallstrom, A., Leone, S., Pedersen, H., Henry, A., Janzen, E.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 335 KB

english, 2011

8

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Ivanov, Ivan G., Gällström, Andreas, Coble, R., Devaty, R.P., Choyke, W.J., Janzén, Erik

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 891 KB

english, 2012

9

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Hahn, S., Beyer, Franziska C., Gällström, Andreas, Carlsson, Patrick, Henry, Anne, Magnusson, Björn, Niklas, J.R., Janzén, Erik

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 741 KB

english, 2009

10

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Gällström, Andreas, Magnusson, Björn, Beyer, Franziska Christine, Gali, Adam, Son, Nguyen Tien, Leone, Stefano, Ivanov, Ivan G., Henry, Anne, Hemmingsson, Carl G., Janzén, Erik

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 622 KB

english, 2012

11

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

Son, Nguyen Tien, Ivády, Viktor, Gali, Adam, Gällström, Andreas, Leone, Stefano, Kordina, Olof, Janzén, Erik

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 343 KB

english, 2012

12

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

Gällström, Andreas, Magnusson, Björn, Carlsson, Patrick, Son, N.T., Henry, Anne, Beyer, Franziska C., Syväjärvi, Mikael, Yakimova, Rositza, Janzén, Erik

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 1.27 MB

english, 2007

13

The Silicon Vacancy in SiC

Janzén, Erik, Gali, Adam, Carlsson, Patrick, Gällström, Andreas, Magnusson, Björn, Son, N.T.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 413 KB

english, 2009

14

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC

Gällström, Andreas, Magnusson, Björn, Thuaire, Aurelie, Paskov, Plamen, Henry, Anne, Janzén, Erik

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 345 KB

english, 2009

15

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates

Son, N.T., Carlsson, Patrick, Gällström, Andreas, Magnusson, Björn, Janzén, Erik

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 355 KB

english, 2009

16

Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC

Gällström, Andreas, Magnusson, Björn, Janzén, Erik

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 321 KB

english, 2009

17

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC

Trinh, Xuan Thang, Gällström, Andreas, Son, Nguyen Tien, Leone, Stefano, Kordina, Olle, Janzén, Erik

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 526 KB

english, 2013

18

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations

Ivády, Viktor, Somogyi, Bálint, Zólyomi, Viktor, Gällström, Andreas, Son, Nguyen Tien, Janzén, Erik, Gali, Adam

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 1.55 MB

english, 2012

19

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

Ivanov, Ivan G., Gällström, Andreas, Leone, Stefano, Kordina, Olof, Son, Nguyen Tien, Henry, Anne, Ivády, Viktor, Gali, Adam, Janzén, Erik

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 2.13 MB

english, 2013

20

Theory of Neutral Divacancy in SiC: A Defect for Spintronics

Gali, Adam, Gällström, Andreas, Son, Nguyen T., Janzén, Erik

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 793 KB

english, 2010

21

Optical properties and Zeeman spectroscopy of niobium in silicon carbide

Gällström, Andreas, Magnusson, Björn, Leone, Stefano, Kordina, Olof, Son, Nguyen T., Ivády, Viktor, Gali, Adam, Abrikosov, Igor A., Janzén, Erik, Ivanov, Ivan G.

Journal:

Physical Review B

Year:

2015

Language:

english

File:

PDF, 881 KB

english, 2015

22

Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory

Csóré, András, Gällström, Andreas, Janzén, Erik, Gali, Adam

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 265 KB

english, 2016

23

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Yakimova, Rositsa, Ivanov, Ivan G., Vines, Lasse, Linnarsson, Margareta, Gällström, Andreas, Giannazzo, Filippo, Roccaforte, Fabrizio, Wellmann, Peter, Syväjärvi, Mikael, Jokubavicius, Valdas

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 678 KB

english, 2017

24

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Yakimova, Rositsa, Ivanov, Ivan G., Vines, Lasse, Linnarsson, Margareta K., Gällström, Andreas, Giannazzo, Filippo, Roccaforte, Fabrizio, Wellmann, Peter, Syväjärvi, Mikael, Jokubavicius, Valdas

Journal:

ECS Journal of Solid State Science and Technology

Year:

2017

Language:

english

File:

PDF, 871 KB

english, 2017

25

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Bosma, Tom, Lof, Gerrit J. J., Gilardoni, Carmem M., Zwier, Olger V., Hendriks, Freddie, Magnusson, Björn, Ellison, Alexandre, Gällström, Andreas, Ivanov, Ivan G., Son, N. T., Havenith, Remco W. A., v

Journal:

npj Quantum Information

Year:

2018

Language:

english

File:

PDF, 1.27 MB

english, 2018

26

-SiC

Magnusson, Björn, Son, Nguyen Tien, Csóré, András, Gällström, Andreas, Ohshima, Takeshi, Gali, Adam, Ivanov, Ivan G.

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 1.19 MB

english, 2018

27

[IEEE 2018 IEEE/OES Autonomous Underwater Vehicle Workshop (AUV) - Porto, Portugal (2018.11.6-2018.11.9)] 2018 IEEE/OES Autonomous Underwater Vehicle Workshop (AUV) - Object Recognition in Forward Looking Sonar Images using Transfer Learning

Fuchs, Louise Rixon, Gallstrom, Andreas, Folkesson, John

Year:

2018

Language:

english

File:

PDF, 143 KB

english, 2018

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